| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Configuration | |
| Mounting Type | |
| Operating Mode | |
| SVHC Present | |
| Transistor Type |
The Toshiba TPC8056-H is a general-purpose small signal N-Channel MOSFET featuring a built-in diode. It operates in enhancement mode and is suitable for switching applications.
Key electrical specifications include a minimum breakdown voltage of 30V and a maximum drain current of 18A. The device exhibits a low maximum on-resistance of 0.0029 ohms and a maximum feedback capacitance of 440 pF. The FET technology used is Metal-Oxide Semiconductor.
This MOSFET is housed in a small outline package, specifically a 2-6J1S SOP-8, with gull wing terminals. It is designed for surface mounting and features a plastic/epoxy package body. The transistor element material is silicon.
The minimum breakdown voltage is 30V.
The maximum drain current is 18A.
The maximum drain-source on-resistance is 0.0029 ohms.
It is an N-Channel MOSFET with a built-in diode, operating in enhancement mode.
It is in a 2-6J1S SOP-8 small outline package designed for surface mounting.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.