SI1022R The Vishay Dale SI1022R is an N-channel small signal MOSFET with a breakdown voltage of 60V and a maximum drain current of 330mA. It features a surface mountable SC-75A package.
Mfr Part #:

SI1022R

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1022R is an N-channel small signal MOSFET with a breakdown voltage of 60V and a maximum drain current of 330mA. It features a surface mountable SC-75A package.
✓ Total Stock: 25 pcs
$ Price Range: $2.81

SI1022R Available from 1 distributor

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✓ Non-Authorised
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25 pcs
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SI1022R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Configuration
Mounting Type
Operating Mode
SVHC Present
Transistor Type

SI1022R Description

Short technical summary and product information.

The Vishay Dale SI1022R is a general-purpose small signal MOSFET designed for switching applications. It features an N-channel configuration with a built-in diode and operates in enhancement mode.

 

Key electrical specifications include a minimum breakdown voltage of 60V and a maximum drain current (ID) of 330mA. The maximum drain-source on-resistance is 1.25 ohm. The FET technology used is Metal-Oxide Semiconductor, and the transistor element material is silicon.

 

This MOSFET is housed in an SC-75A package, designed for surface mounting. It has a rectangular shape with a small outline package style. The terminals are finished with Tin Lead and feature a gull wing form and dual positioning. The package body material is plastic/epoxy.

SI1022R Quick Information

Product Type: MOSFET
Series: SI1022R
Canonical Name: Vishay Dale SI1022R N-Channel Small Signal MOSFET
Subcategory: Small Signal

SI1022R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1022R Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1022R Features

  • 60V minimum breakdown voltage.
  • 330mA maximum drain current.
  • 1.25 ohm maximum on-resistance.
  • N-channel enhancement mode operation.
  • SC-75A surface mount package.

SI1022R Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification.
  • Ideal for portable electronics.
  • Can be used in load switching.

SI1022R FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the SI1022R MOSFET?

The minimum breakdown voltage is 60V.

What is the maximum drain current for the SI1022R?

The maximum drain current (ID) is 330mA.

What is the maximum on-resistance of the SI1022R?

The maximum drain-source on-resistance is 1.25 ohm.

What type of channel does the SI1022R MOSFET have?

It has an N-channel type.

What package is the SI1022R MOSFET supplied in?

It is supplied in an SC-75A package.

Is the SI1022R MOSFET suitable for surface mounting?

Yes, it is designed for surface mounting.

SI1022R Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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TPC8056-H
TPC8056-H
Toshiba
The Toshiba TPC8056-H is an N-Channel MOSFET with a 30V breakdown voltage and 18A maximum drain current. It is designed for switching applications.
View Part
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