STS3C3F30L
VBsemi
The VBsemi STS3C3F30L is a Dual N+P Channel MOSFET designed for power management and switching circuits. It features a SOP8 package, ±30V VDS, and ±8A ID.
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29,175 pcs
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29175 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The TPC8076-H from VBsemi is a Single N-Channel MOSFET housed in a compact SOP8 package. This component utilizes Trench Technology, offering efficient performance for power switching applications.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 18A. The gate-source voltage (Vgs) is rated at ±20V, with a typical threshold voltage (Vth) of 1.7V. The on-resistance (RDS(on)) is specified at 5mΩ at 4.5V Vgs and 4mΩ at 10V Vgs, indicating low conduction losses.
This MOSFET is suitable for a range of applications requiring reliable power management. Its SOP8 package facilitates easy integration into printed circuit boards, making it a practical choice for designers.
VBsemi is known for providing direct-from-manufacturer components, ensuring quality and availability for electronic designs.
The TPC8076-H has a maximum drain-source voltage of 30V.
The TPC8076-H has a continuous drain current of 18A.
The TPC8076-H is supplied in a SOP8 package.
The TPC8076-H utilizes Trench Technology.
The typical threshold voltage for the TPC8076-H is 1.7V.
The RDS(on) of the TPC8076-H is 5mΩ at 4.5V.
The RDS(on) of the TPC8076-H is 4mΩ at 10V.