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28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The TPC8408-H from VBsemi is an N+P-Channel Dual MOSFET, ideal for high-power applications and complex circuit designs. This device offers a wide operating voltage range with a Drain-Source Voltage (VDS) of ±60V and a Gate-Source Voltage (VGS) up to ±20V.
Key electrical characteristics include a continuous drain current of 5.3A for the N-channel and -4.9A for the P-channel. The on-resistance (RDS(ON)) is low, specified at 29mΩ/60mΩ (N-Channel/P-Channel) at VGS=10V and 26mΩ/55mΩ at VGS=4.5V, ensuring efficient power control and management. The Trench technology contributes to its performance.
Packaged in a compact SOP8 format, the TPC8408-H is suitable for various compact circuit board designs. Its features make it applicable in areas such as power switch modules for industrial automation, DC-DC converters for electric vehicle chargers, and motor driver circuits for stepper and DC motors.
The operating voltage for the TPC8408-H is ±60V.
The TPC8408-H MOSFET is supplied in a SOP8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The continuous drain current for the N-Channel is 5.3A.
The continuous drain current for the P-Channel is -4.9A.
The typical on-resistance of the TPC8408-H N-Channel at VGS=10V is 29mΩ.