| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,971 pcs
|
3971 pcs | On Request | 1 | On Request | On Request | 08+Q1 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation |
The TPC8025 is a Field Effect Transistor manufactured by Toshiba. This component is designed for various electronic applications requiring efficient switching and amplification.
Key electrical specifications include a minimum breakdown voltage of 30V and a minimum drain-source resistance of 14.5mΩ. The maximum power dissipation is rated at 1.9W, and the maximum operating temperature is 150°C, ensuring reliable performance under demanding conditions.
With 8 terminals, the TPC8025 is suitable for integration into compact electronic designs. Its specifications suggest suitability for power management circuits, switching applications, and general-purpose amplification tasks where a robust MOSFET is required.
This component is part of Toshiba's line of semiconductor devices. Further details regarding specific applications, package type, and detailed electrical characteristics can be found in the manufacturer's datasheet.
The TPC8025 has a minimum breakdown voltage of 30V.
The minimum drain-source resistance is 14.5mΩ.
The TPC8025 can operate up to a maximum temperature of 150°C.
The maximum power dissipation for the TPC8025 is 1.9W.
The TPC8025 has 8 terminals.