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28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Toshiba TPC8033-H is a Silicon N-Channel MOS Type Field Effect Transistor. This component is designed for various electronic applications requiring reliable switching and amplification.
Key electrical specifications include a minimum drain-source resistance of 8.6mΩ and a breakdown voltage of 30V. The transistor can handle a maximum power dissipation of 1.9W and operates at temperatures up to 150°C.
With 8 terminals, this transistor is suitable for integration into diverse circuit designs. Its specifications make it a versatile component for engineers working on power management and signal processing circuits.
The breakdown voltage is 30V minimum.
The minimum drain-source resistance is 8.6mΩ.
The maximum power dissipation is 1.9W.
The maximum operating temperature is 150°C.
The TPC8033-H has 8 terminals.