TPC8032-H The Toshiba TPC8032-H is a Silicon N-Channel MOS Type Field Effect Transistor. It offers a breakdown voltage of 30V and a maximum power dissipation of 1.9W.
Mfr Part #:

TPC8032-H

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8032-H is a Silicon N-Channel MOS Type Field Effect Transistor. It offers a breakdown voltage of 30V and a maximum power dissipation of 1.9W.
✓ Total Stock: 2,076 pcs

TPC8032-H Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,931 pcs
1931 pcs On Request 1 On Request On Request 09+ On Request On Request
Non-Authorised Inventory information
145 pcs
145 pcs On Request 1 On Request On Request 18+ On Request 2026-06-03 08:15:22

TPC8032-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
SVHC Present

TPC8032-H Description

Short technical summary and product information.

The Toshiba TPC8032-H is a Silicon N-Channel MOS Type Field Effect Transistor designed for various electronic applications. This component features a minimum drain-source resistance of 8.6mΩ and a breakdown voltage of 30V.

 

With a maximum power dissipation rating of 1.9W and a maximum operating temperature of 150°C, the TPC8032-H is built for reliable performance. The transistor has 8 terminals and is manufactured by Toshiba.

 

This field effect transistor is part of the broader category of discrete semiconductor products, specifically within transistors, FETs, and MOSFETs. Its specifications make it suitable for applications requiring efficient switching and power handling.

TPC8032-H Quick Information

Product Type: Transistor
Canonical Name: Silicon N-Channel MOS Type Field Effect Transistor
Subcategory: Field Effect Transistor

TPC8032-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8032-H Features

  • Silicon N-Channel MOS Type Field Effect Transistor
  • 30V minimum breakdown voltage
  • 8.6mΩ minimum drain-source resistance
  • 1.9W maximum power dissipation
  • 150°C maximum operating temperature

TPC8032-H Applications

  • Suitable for power switching applications
  • Used in electronic circuits requiring low on-resistance
  • Component for discrete semiconductor designs

TPC8032-H FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TPC8032-H?

The TPC8032-H has a minimum breakdown voltage of 30V.

What is the minimum drain-source resistance for the TPC8032-H?

The minimum drain-source resistance is 8.6mΩ.

What is the maximum power dissipation of the TPC8032-H?

The maximum power dissipation is 1.9W.

What is the maximum operating temperature for the TPC8032-H?

The maximum operating temperature is 150°C.

What is the RoHS status of the TPC8032-H?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TPC8032-H?

The MSL is 1 Unlimited.

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