| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,931 pcs
|
1931 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
145 pcs
|
145 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | 2026-06-03 08:15:22 |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPC8032-H is a Silicon N-Channel MOS Type Field Effect Transistor designed for various electronic applications. This component features a minimum drain-source resistance of 8.6mΩ and a breakdown voltage of 30V.
With a maximum power dissipation rating of 1.9W and a maximum operating temperature of 150°C, the TPC8032-H is built for reliable performance. The transistor has 8 terminals and is manufactured by Toshiba.
This field effect transistor is part of the broader category of discrete semiconductor products, specifically within transistors, FETs, and MOSFETs. Its specifications make it suitable for applications requiring efficient switching and power handling.
The TPC8032-H has a minimum breakdown voltage of 30V.
The minimum drain-source resistance is 8.6mΩ.
The maximum power dissipation is 1.9W.
The maximum operating temperature is 150°C.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.