| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,455 pcs
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3455 pcs | On Request | 1 | On Request | On Request | 08+Q1 | On Request | On Request |
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The Toshiba TPC8032-H is a Silicon N-Channel MOS Type Field Effect Transistor designed for various electronic applications. This MOSFET offers a breakdown voltage of 30V and a minimum drain-source resistance of 8.6mΩ, indicating efficient power handling capabilities.
With a maximum power dissipation of 1.9W and a maximum operating temperature of 150°C, the TPC8032-H is suitable for demanding environments. The transistor has 8 terminals, facilitating its integration into complex circuits. Its RoHS3 compliance status suggests adherence to environmental regulations.
This component is part of Toshiba's line of field-effect transistors, with several similar parts available for design flexibility. The TPC8032-H is a reliable choice for engineers seeking a high-performance N-Channel MOSFET for their designs.
The minimum breakdown voltage for the TPC8032-H is 30V.
The minimum drain-source resistance is 8.6mΩ.
The TPC8032-H can operate at a maximum temperature of 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.