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2,165 pcs
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2165 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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TRINNO Technology offers the TMPF10N65A, a Power MOSFET utilizing Planar MOSFET technology. This component is suitable for cost-effective, reliable, and robust solutions in AC/DC and DC/DC applications such as adaptors, LED lighting, SMPS, and PFC.
The TMPF10N65A has a maximum drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 9.5A at 25℃. Its typical gate-source threshold voltage (VGS(th)) is 4V, and the maximum on-resistance (RDS(on)) at 25℃ is 0.82Ω.
This MOSFET is housed in a TO-220F package, designed for through-hole mounting. TRINNO's super junction MOSFET offerings provide high efficiency and power density solutions for AC/DC conversion.
Key specifications include a 650V breakdown voltage, 9.5A continuous current, and low on-resistance, making it a versatile component for power management circuits.
The maximum drain-source voltage (VDSS) for the TMPF10N65A is 650V.
The continuous drain current (ID) at 25℃ for the TMPF10N65A is 9.5A.
The typical gate-source threshold voltage (VGS(th)) is 4V.
The maximum on-resistance (RDS(on)) at 25℃ is 0.82Ω.
The TMPF10N65A is supplied in a TO-220F package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
