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TMPF4N65Z The TRINNO TMPF4N65Z is an N-Channel MOSFET designed for AC/DC and DC/DC applications. It features a 650V breakdown voltage and a 1.4Ω maximum on-resistance.
Mfr Part #:

TMPF4N65Z

Available from 2 distributors
Mfr Name: Trinno
Trinno
The TRINNO TMPF4N65Z is an N-Channel MOSFET designed for AC/DC and DC/DC applications. It features a 650V breakdown voltage and a 1.4Ω maximum on-resistance.
✓ Total Stock: 8,190 pcs

TMPF4N65Z Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,595 pcs
On Request
4595 pcs On Request 1 On Request On Request 1235+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
3,595 pcs
On Request
3595 pcs On Request 1 On Request On Request 1235+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TMPF4N65Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Mounting Type
Package / Case
SVHC Present
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TMPF4N65Z Description

Short technical summary and product information.

The TRINNO TMPF4N65Z is an N-Channel Power MOSFET from TRINNO Technology Co., Ltd. This component utilizes Planar MOSFET technology, offering cost-effective, reliable, and robust solutions suitable for AC/DC and DC/DC applications such as adaptors, LED lighting, SMPS, and PFC.

 

Key electrical characteristics include a Drain-Source Breakdown Voltage (Vds) of 650V and a Continuous Drain Current (Id) of 6.5A at 25℃. The typical Gate-Source Threshold Voltage (Vgs(th)) is 3V, and the maximum Drain-Source On-Resistance (Rds(on)) at 25℃ is 1.4Ω. The typical Gate Charge (Qg) is 3nC.

 

This MOSFET is housed in a TO-220F package, designed for through-hole mounting. TRINNO's super junction MOSFET technology provides high efficiency and power density solutions.

 

TRINNO Technology is a leader in power semiconductor technology, offering a comprehensive range of power MOSFET products.

TMPF4N65Z Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel MOSFET

TMPF4N65Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TMPF4N65Z Features

  • 650V Drain-Source Breakdown Voltage.
  • 6.5A Continuous Drain Current.
  • 1.4Ω Maximum On-Resistance.
  • 3nC Typical Gate Charge.
  • TO-220F Package for Through-Hole Mounting.

TMPF4N65Z Applications

  • Suitable for AC/DC power supplies.
  • Used in DC/DC converters.
  • Ideal for LED lighting applications.
  • Applicable in SMPS designs.
  • Used in PFC circuits.

TMPF4N65Z FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum voltage rating for the TMPF4N65Z MOSFET?

The Drain-Source Breakdown Voltage (Vds) is 650V.

What is the continuous drain current for the TMPF4N65Z at 25℃?

The continuous drain current (Id) is 6.5A at 25℃.

What is the typical gate threshold voltage for this MOSFET?

The typical Gate-Source Threshold Voltage (Vgs(th)) is 3V.

What is the maximum on-resistance of the TMPF4N65Z at 25℃?

The maximum Drain-Source On-Resistance (Rds(on)) is 1.4Ω at 25℃.

What package type is the TMPF4N65Z MOSFET supplied in?

The TMPF4N65Z is supplied in a TO-220F package.

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