| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,400 pcs
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3400 pcs | On Request | 1 | On Request | On Request | 2012 | On Request | On Request |
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The WFF7N60 is an N-Channel Power MOSFET manufactured by Wisdom Semiconductor, utilizing their advanced planar stripe DMOS technology. This technology is engineered to minimize on-state resistance and provide high rugged avalanche characteristics.
Key electrical specifications include a Drain to Source Voltage (VDSS) of 600V and a Continuous Drain Current (ID) of 7.0A at 25°C, reducing to 4.4A at 100°C. The maximum on-state resistance (RDS(ON)) is 1.2 Ω at a gate-source voltage of 10V and a drain current of 3.5A. The device features a gate threshold voltage (VGS(th)) ranging from 2.0V to 4.0V.
Thermal characteristics include a junction-to-case thermal resistance (RθJC) of 2.6 °C/W and a junction-to-ambient thermal resistance (RθJA) of 62.5 °C/W. The maximum operating and storage temperature is 150°C. The MOSFET is packaged in a TO-220F package suitable for through-hole mounting.
This MOSFET is well-suited for applications such as high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology.
The maximum continuous drain current for the WFF7N60 at 25°C is 7.0A.
The maximum drain-source voltage (VDSS) for the WFF7N60 is 600V.
The maximum on-state resistance (RDS(ON)) for the WFF7N60 is 1.2 Ω at VGS=10V and ID=3.5A.
The operating junction and storage temperature range for the WFF7N60 is -55°C to 150°C.
The WFF7N60 is available in a TO-220F package.
The RoHS status of the WFF7N60 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the WFF7N60 is 1 Unlimited.