| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The TRINNO TMPF4N60G is an N-Channel MOSFET belonging to the TMP4N60/TMPF4N60 series. It features a high drain-source breakdown voltage of 600V and a continuous drain current of 4A at 25°C.
Key electrical characteristics include a low gate charge, a typical on-resistance of 2.55W at VGS=10V, and fast switching times with a typical turn-on delay of 47ns and turn-off delay of 66ns. The device is 100% avalanche tested and offers improved dv/dt capability.
Packaged in a TO-220F through-hole configuration, the TMPF4N60G is suitable for various power management applications. It is RoHS compliant and Halogen free.
This MOSFET is designed for applications requiring high voltage and moderate current handling capabilities, such as power supplies, motor control, and lighting.
The maximum continuous drain current for the TMPF4N60G is 4A at 25°C.
The drain-source breakdown voltage (BVDSS) of the TMPF4N60G is 600V.
The typical gate threshold voltage (VGS(th)) for the TMPF4N60G is between 2V and 4V.
The typical total gate charge (Qg) for the TMPF4N60G is 12nC.
The TMPF4N60G is available in the TO-220F package.
Yes, the TMPF4N60G is RoHS3 compliant.
Yes, the TMPF4N60G features a Halogen Free package.