| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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900 pcs
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900 pcs | On Request | 1 | On Request | On Request | 13+PB | On Request | On Request |
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| SVHC Present |
The TK7A90E is a MOSFET manufactured by Toshiba, designed for high-voltage applications. It features a drain-source voltage rating of 900V, a typical drain-source resistance of 2Ω, and a maximum power dissipation of 45W at both ambient and case temperature conditions. The device is capable of operating at a maximum junction temperature of 150°C. The TO-220SIS package enables through-hole mounting, suitable for power electronics where heat dissipation is managed via a heatsink. This component is typically used in switching power supplies, inverters, and other power conversion circuits requiring high voltage handling capability.
900V.
2Ω.
45W at both ambient and case temperature conditions.
150°C.
TO-220SIS through-hole package.