| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,550 pcs
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8550 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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| SVHC Present |
The Toshiba TK13A55DA is a silicon N-channel MOS type field-effect transistor, part of Toshiba's π-MOSⅦ series. It is specifically designed for switching regulator applications.
This MOSFET features a high drain-source breakdown voltage of 550V and a continuous drain current rating of 12.5A at 25°C. The transistor is housed in a TO-220SIS package, suitable for through-hole mounting.
Key electrical characteristics include a 550V drain-source voltage and a 12.5A continuous drain current. The device is intended for use in power supply circuits and other switching applications where high voltage and current handling are required.
The drain-source breakdown voltage is 550V.
The continuous drain current is 12.5A at 25°C.
The TK13A55DA is available in a TO-220SIS package.
The mounting type is through hole.