TK11A55D The Toshiba TK11A55D is an N-Channel MOSFET designed for power management applications. It offers a 550V drain-to-source voltage and 11A continuous drain current.
Mfr Part #:

TK11A55D

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Mfr Name: Toshiba
Toshiba
The Toshiba TK11A55D is an N-Channel MOSFET designed for power management applications. It offers a 550V drain-to-source voltage and 11A continuous drain current.
✓ Total Stock: 60,000 pcs

TK11A55D Available from 1 distributor

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60,000 pcs
60000 pcs On Request 1 On Request On Request 13+ On Request On Request

TK11A55D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Package / Case
Power Dissipation
Rds On (Max) @ Id, Vgs
SVHC Present
Technology

TK11A55D Description

Short technical summary and product information.

The Toshiba TK11A55D is an N-Channel MOSFET belonging to the π-MOSVII series. It is designed for power management applications and features a high drain-to-source voltage rating of 550V.

 

Key electrical specifications include a continuous drain current of 11A at 25°C and a maximum on-resistance of 630mOhm at 5.5A and 10V gate drive. The device has a maximum gate charge of 25 nC at 10V and a gate threshold voltage of 4V at 1mA. The maximum gate-source voltage is ±30V, and the input capacitance is rated at a maximum of 1350 pF at 25V.

 

This MOSFET has a maximum power dissipation of 45W (Tc) and an operating junction temperature range of up to 150°C. It is housed in a TO-220SIS package and is designed for through-hole mounting.

 

Environmental compliance includes RoHS3 compliance and Moisture Sensitivity Level 1. The REACH status is unaffected.

TK11A55D Quick Information

Product Type: MOSFET
Series: π-MOSVII
Canonical Name: TK11A55D N-Channel MOSFET
Subcategory: Single

TK11A55D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

TK11A55D Features

  • 550V drain-to-source voltage rating.
  • 11A continuous drain current capability.
  • 630mOhm maximum on-resistance.
  • 150°C maximum operating temperature.
  • TO-220SIS through-hole package.

TK11A55D Applications

  • Suitable for power management circuits.
  • Used in switching power supplies.
  • Ideal for motor control applications.
  • Applicable in power factor correction.

TK11A55D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the TK11A55D?

The drain-to-source voltage (Vdss) is 550V.

What is the continuous drain current for the TK11A55D at 25°C?

The continuous drain current (Id) at 25°C is 11A.

What is the maximum on-resistance of the TK11A55D?

The maximum on-resistance (Rds On) is 630mOhm at 5.5A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction temperature (TJ) is up to 150°C.

What package type is the TK11A55D supplied in?

The TK11A55D is supplied in a TO-220SIS package.

Is the TK11A55D RoHS compliant?

Yes, the TK11A55D is ROHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TK11A55D?

The Moisture Sensitivity Level (MSL) is 1 (Unlimited).

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