| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Technology |
The Toshiba TK11A55D is an N-Channel MOSFET belonging to the π-MOSVII series. It is designed for power management applications and features a high drain-to-source voltage rating of 550V.
Key electrical specifications include a continuous drain current of 11A at 25°C and a maximum on-resistance of 630mOhm at 5.5A and 10V gate drive. The device has a maximum gate charge of 25 nC at 10V and a gate threshold voltage of 4V at 1mA. The maximum gate-source voltage is ±30V, and the input capacitance is rated at a maximum of 1350 pF at 25V.
This MOSFET has a maximum power dissipation of 45W (Tc) and an operating junction temperature range of up to 150°C. It is housed in a TO-220SIS package and is designed for through-hole mounting.
Environmental compliance includes RoHS3 compliance and Moisture Sensitivity Level 1. The REACH status is unaffected.
The drain-to-source voltage (Vdss) is 550V.
The continuous drain current (Id) at 25°C is 11A.
The maximum on-resistance (Rds On) is 630mOhm at 5.5A and 10V.
The operating junction temperature (TJ) is up to 150°C.
The TK11A55D is supplied in a TO-220SIS package.
Yes, the TK11A55D is ROHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 (Unlimited).