| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,178 pcs
|
40178 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 1521+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Storage Temperature |
The Toshiba TK65G10N1 is an N-channel Silicon MOSFET from the U-MOSIII-H series. It is designed for applications such as switching voltage regulators.
Key electrical characteristics include a low drain-source on-resistance of 3.8 mΩ (typical) at VGS = 10 V, and a low leakage current of 10 µA (maximum) at VDS = 100 V. The gate threshold voltage ranges from 2.0 to 4.0 V.
Absolute maximum ratings specify a drain-source voltage of 100 V and a continuous drain current of 136 A. The device has a maximum channel temperature of 150 °C and a storage temperature range of -55 to 150 °C.
This MOSFET is housed in a D2PAK package, suitable for surface mounting. The internal circuit consists of Gate, Drain, and Source connections.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V.
D2PAK (TO-263) surface-mount package.
150 °C.
3.8 mΩ at VGS = 10 V.
136 A (package limited).
2 V to 4 V at VDS = 10 V, ID = 1.0 mA.