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TPN2R503NC The Toshiba TPN2R503NC is an N-channel MOSFET designed for power management switches. It offers a low drain-source on-resistance of 2.1 mΩ (typ.) at VGS = 10 V and a drain-source voltage of 30 V.
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TPN2R503NC

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPN2R503NC is an N-channel MOSFET designed for power management switches. It offers a low drain-source on-resistance of 2.1 mΩ (typ.) at VGS = 10 V and a drain-source voltage of 30 V.
✓ Total Stock: 27,565 pcs

TPN2R503NC Available from 1 distributor

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Optech Co.,Limited ✓
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27,565 pcs
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27565 pcs On Request 1 8 On Request 19+ On Request On Request
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TPN2R503NC Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Power Dissipation
SVHC Present
Storage Temperature
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TPN2R503NC Description

Short technical summary and product information.

The Toshiba TPN2R503NC is an N-channel Silicon MOSFET from the U-MOS III series, designed for power management switch applications. It features a low drain-source on-resistance of 2.1 mΩ typical when VGS is 10 V, and a maximum drain-source voltage of 30 V.

 

This MOSFET also exhibits low leakage current, rated at 10 µA maximum when VDS is 30 V. It operates in enhancement mode with a threshold voltage (Vth) between 1.3 V and 2.3 V at an ID of 0.5 mA and VDS of 10 V.

 

The component comes in a small and thin TSON Advance package, contributing to a small footprint in applications. Absolute maximum ratings include a continuous drain current of 85 A and a pulsed drain current of 120 A. The maximum channel temperature is 150 °C, and the storage temperature ranges from -55 °C to 150 °C.

TPN2R503NC Quick Information

Product Type: N-channel MOSFET
Canonical Name: Toshiba TPN2R503NC N-channel MOSFET
Subcategory: N-channel

TPN2R503NC Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPN2R503NC Features

  • Low drain-source on-resistance: 2.1 mΩ typical.
  • Low leakage current: 10 µA maximum.
  • Small footprint TSON Advance package.
  • 30 V drain-source voltage rating.
  • Enhancement mode operation.

TPN2R503NC Applications

  • Suitable for high-current load switching.
  • Ideal for DC-DC converter circuits.
  • Used in battery management systems.
  • Applicable in power supply designs.

TPN2R503NC FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30 V.

What is the maximum continuous drain current?

85 A.

What is the typical on-resistance?

2.1 mΩ at VGS = 10 V.

What is the package type?

TSON Advance.

What is the maximum channel temperature?

150 °C.

What is the gate threshold voltage range?

1.3 V to 2.3 V.

What is the maximum power dissipation?

35 W at Tc = 25 °C.

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