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33 pcs
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33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP32 is a power bipolar junction transistor (BJT) manufactured by STMicroelectronics, designed for medium power linear and switching applications. This PNP transistor features a continuous collector current rating of -3A and a collector power dissipation of 2W. Its electrical characteristics include a DC current gain (hFE) of at least 25 at IC=-1A and a transition frequency (fT) of 3MHz at VCE=-10V and IC=-0.5A.
The TIP32 is housed in a TO-220 package, which is suitable for through-hole mounting. Key electrical parameters include a collector-emitter breakdown voltage of -40V and a collector-emitter saturation voltage of -1.2V at high current levels. The operating junction temperature range is up to 150℃, with storage temperatures from -55℃ to +150℃.
This transistor is a general-purpose component suitable for various amplification and switching tasks in power supply circuits, audio amplifiers, and other general electronic designs where a robust PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous collector current for the TIP32 is -3A.
The collector power dissipation of the TIP32 is 2W.
The junction temperature for the TIP32 ranges from -55℃ to +150℃.
The TIP32 transistor comes in a TO-220 package.
The collector-emitter breakdown voltage for the TIP32 is -40V.
The minimum DC current gain (hFE) of the TIP32 at VCE=-4V, IC=-1A is 25.
The transition frequency (fT) of the TIP32 is 3MHz.
