| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,704 pcs
|
2704 pcs | On Request | 1 | On Request | On Request | 91+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Voltage | |
| Junction Temperature | |
| Mounting Type | |
| Reverse Current | |
| Reverse Recovery Time | |
| Storage Temperature |
The Shindengen D4SB60L is a bridge diode designed for various electronic applications. It features a repetitive peak reverse voltage of 600V and an average forward current rating of 4A when used with a heatsink at 111℃, or 2.5A without a heatsink at 25℃.
This component offers a surge forward current capability of 150A for a single cycle. The electrical characteristics include a typical forward voltage of 0.95V at 2A and a reverse current of 10μA at 600V. The reverse recovery time is specified at 10000ns.
Thermal performance is indicated by junction-to-case thermal resistance of 5.5℃/W, junction-to-lead at 6℃/W, and junction-to-ambient at 30℃/W. The diode operates within a storage temperature range of -40℃ to 150℃ and a junction temperature of 150℃.
The D4SB60L is housed in a compact SIP (3S) package and is suitable for through-hole mounting. It features Pb-free terminals and is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.25 | $2.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage is 600V.
The average forward current is 4A with a heatsink at 111℃, and 2.5A without a heatsink at 25℃.
The typical forward voltage is 0.95V at 2A.
The reverse recovery time is 10000ns.
The package type is a compact SIP, specifically the 3S house name.
Yes, the D4SB60L features Pb-free terminals and is RoHS compliant.