| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,198 pcs
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2198 pcs | On Request | 1 | On Request | On Request | 0317/0337/0210 | On Request | On Request |
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The 2N5490 is a silicon NPN power transistor manufactured by NJS, suitable for medium power and amplifier applications. It is housed in a TO-220 package.
Key electrical characteristics include a maximum Collector-Base Voltage (VCBO) of 60V and a maximum Collector-Emitter Voltage (VCEO) of 40V. The device can handle a continuous Collector Current (IC) of up to 7A and a Base Current (IB) of up to 3A. Its maximum Total Power Dissipation (PT) is 50W at 25℃ case temperature.
Thermal characteristics include a Thermal Resistance Junction-to-Case (Rth j-c) of 2.5℃/W. The maximum Junction Temperature (Tj) is 150℃, and the Storage Temperature (Tstg) ranges from -65℃ to 150℃.
This transistor is designed for applications requiring medium power handling and amplification capabilities. The TO-220 package is commonly used for power applications due to its ease of mounting and heat dissipation properties.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage (VCBO) for the 2N5490 transistor is 60V.
The maximum Collector-Emitter Voltage (VCEO) for the 2N5490 transistor is 40V.
The continuous Collector Current (IC) rating for the 2N5490 transistor is 7A.
The total power dissipation (PT) for the 2N5490 transistor is 50W at 25℃ case temperature.
The 2N5490 transistor comes in a TO-220 package.
The thermal resistance from junction to case (Rth j-c) for the 2N5490 transistor is 2.5℃/W.
The RoHS status of the 2N5490 transistor is RoHS3 Compliant.