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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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103 pcs
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103 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP115 is a silicon Epitaxial-Base PNP transistor in a monolithic Darlington configuration, housed in a standard TO-220 plastic package. This component is designed for medium power linear and switching applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCE) of 60V and a maximum collector current (IC) of 2A. It boasts a high DC current gain (hFE) of a minimum of 1000 at VCE=-4V and IC=-1A. The power dissipation (PD) is rated at 50W.
This transistor is part of the TIP series and is often used in industrial applications. Its monolithic construction includes built-in base-emitter shunt resistors, contributing to its reliability. The TO-220 package is suitable for through-hole mounting.
Equivalent or alternate parts include TIP100, TIP101, TIP102, TIP105, TIP106, TIP107, and TIP110.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCE) for the TIP115 is 60V.
The maximum collector current (IC) for the TIP115 is 2A.
The minimum DC current gain (hFE) for the TIP115 is 1000 at VCE=-4V and IC=-1A.
The TIP115 is supplied in a TO-220 package.
The TIP115 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TIP115 is 1 Unlimited.
