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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,239 pcs
|
2239 pcs | On Request | 1 | On Request | On Request | 2019+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The AOS AOTF10N65 is an N-Channel MOSFET fabricated using an advanced high voltage MOSFET process. It is designed to deliver high performance and robustness, making it suitable for popular AC-DC applications.
Key electrical specifications include a Drain-Source Breakdown Voltage of 650V and a continuous drain current of 10A at 25°C. The on-resistance is typically 0.77W at VGS=10V and ID=10A. The device also features a gate threshold voltage ranging from 3V to 4.5V.
Dynamic parameters such as input capacitance (Ciss) are typically 1369pF, output capacitance (Coss) is typically 118pF, and reverse transfer capacitance (Crss) is typically 10pF. Switching parameters include a turn-on delay time of 30ns and a turn-off delay time of 74ns.
The MOSFET is housed in a TO-220F package, suitable for through-hole mounting. It has a maximum junction temperature of 150°C and a power dissipation of 50W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage is 650V at a test condition of ID=250μA, VGS=0V, and TJ=25°C.
The typical On-Resistance is 0.77W at a test condition of VGS=10V and ID=10A.
The continuous drain current is 10A at 25°C.
The AOTF10N65 is available in a TO-220F package.
The maximum operating junction temperature is 150°C.
