Mfr Part #:

TK10A80E.S4X

Mfr Name: Toshiba

The Toshiba TK10A80E.S4X is an N-Channel MOSFET designed for switching voltage regulator applications. It offers a high drain-source voltage rating and low on-resistance.

✓ Total Stock: 808 pcs

TK10A80E.S4X Available from 2 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	506 pcs On Request	506 pcs	On Request	1	On Request	On Request	1719+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	302 pcs On Request	302 pcs	On Request	1	On Request	On Request	1719+	On Request	On Request

TK10A80E.S4X Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Mounting Type	Through Hole
Power Dissipation	50W
Storage Temperature	-55 to 150°C

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TK10A80E.S4X Description

Short technical summary and product information.

The Toshiba TK10A80E.S4X is an N-Channel Silicon MOSFET designed for applications such as switching voltage regulators. It features a low drain-source on-resistance of 0.7 Ω (typ.) and a low leakage current of 10 µA (max) at 640 V.

This MOSFET has a drain-source voltage rating (VDSS) of 800V and a continuous drain current (ID) of 10A. The gate-source voltage (VGSS) is ±30V. It is an enhancement mode device with a threshold voltage (Vth) between 2.5V and 4.0V at 1 mA.

The device is housed in a TO-220SIS package, suitable for through-hole mounting. Absolute maximum ratings include a power dissipation (PD) of 50W at 25°C, a channel temperature (Tch) up to 150°C, and a storage temperature range from -55°C to 150°C. Thermal resistance from channel to case is 2.5 °C/W.

Key electrical characteristics include a pulsed drain current (IDP) of 30A and a single-pulse avalanche energy (EAS) of 454 mJ. The isolation voltage (VISO(RMS)) is rated at 2000V.

TK10A80E.S4X Quick Information

Product Type: MOSFET

Series: TK10A80E

Canonical Name: TK10A80E.S4X N-Channel MOSFET

Subcategory: N-Channel

TK10A80E.S4X Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TK10A80E.S4X Features

800V drain-source voltage rating
Low 0.7 Ohm typical on-resistance
TO-220SIS package for through-hole mounting
Suitable for switching voltage regulators
10A continuous drain current

TK10A80E.S4X Applications

Suitable for power supply switching circuits.
Used in motor control and inverter designs.
Ideal for DC-DC converter applications.
Applicable for lighting and battery charging systems.

TK10A80E.S4X FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the TK10A80E.S4X?

The maximum drain-source voltage is 800V.

What is the continuous drain current rating?

The maximum continuous drain current is 10A.

What is the typical drain-source on-resistance?

The typical drain-source on-resistance is 0.7 ohms.

What package does the TK10A80E.S4X come in?

It comes in a TO-220SIS package with through-hole mounting.

What is the maximum operating channel temperature?

The maximum channel temperature is 150°C.

What is the gate threshold voltage range?

The gate threshold voltage ranges from 2.5V to 4.0V at VDS=10V, ID=1mA.