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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba TIM4450-45SL is a microwave power GaAs FET designed for high-performance RF applications. It features a hermetically sealed package and is internally matched for broad band operation.
Key electrical specifications include a typical output power of 46.5 dBm at 1dB gain compression and a typical power gain of 9.5 dB at frequencies from 4.4GHz to 5.0GHz. The device exhibits low intermodulation distortion, with a typical IM3 of -45 dBc at a Pout of 35.5dBm. It also offers a typical power added efficiency of 41% under specified conditions.
Absolute maximum ratings include a drain-source voltage of 15V and a drain current of 20A. The device has a total power dissipation of 125W at 25°C case temperature and can operate up to a channel temperature of 175°C. The thermal resistance from channel to case is typically 0.8°C/W.
This RF GaAs FET is suitable for applications requiring high power and linearity in the microwave frequency range.
| Qty | Low | High |
|---|---|---|
| 1+ | $103.07 | $103.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power at 1dB gain compression for the TIM4450-45SL is 46.5 dBm.
The typical power gain at 1dB compression is 9.5 dB.
The typical 3rd order intermodulation distortion is -45 dBc.
The package type is 2-16G1B.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
The REACH status is REACH Unaffected.