| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,004 pcs
|
1004 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Approval Agency | |
| Mounting Type | |
| Noise Figure | |
| Package / Case | |
| Storage Temperature | |
| Thermal Resistance |
The FHX35X is a High Electron Mobility Transistor (HEMT) chip manufactured by Sumitomo Electric Industries. It is engineered for general-purpose applications requiring low noise figure and high gain, making it suitable for amplifiers in the 2-18GHz frequency range.
Key electrical characteristics include a typical noise figure of 1.2dB and an associated gain of 10.0dB at 12GHz. The device features a gate length of less than or equal to 0.25µm and a gate width of 280µm. Absolute maximum ratings specify a drain-source voltage of 4V and a gate-source voltage of -3V, with a maximum total power dissipation of 290mW.
This HEMT chip is well-suited for telecommunication, DBS, TVRO, and VSAT applications. For optimal performance and reliability, the chip must be enclosed in a hermetically sealed environment. The manufacturer recommends specific operating conditions, including a drain-source operating voltage not exceeding 3 volts and an operating channel temperature below 80°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure of the FHX35X is 1.2dB at 12GHz.
The associated gain for the FHX35X is 10.0dB at 12GHz.
Fujitsu recommends that the drain-source operating voltage (VDS) should not exceed 3 volts.
The operating channel temperature (Tch) should not exceed 80°C for reliable operation.
The FHX35X is intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.