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76 pcs
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76 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FLM1011-8F is a power GaAs FET designed for X and Ku-band applications, offering optimized power and gain within a 50-ohm system. It boasts a high output power of 39.0 dBm (typical) and a power gain of 7.0 dB (typical) across a broad frequency band of 10.7 to 11.7 GHz.
Key electrical characteristics include a typical power-added efficiency (PAE) of 29% and a low third-order intermodulation distortion (IM3) of -46 dBc at a 28.5 dBm output power. The device operates with a drain-source voltage up to 15V and a gate-source voltage down to -5V, with a maximum total power dissipation of 42.8W at 25°C case temperature.
This internally matched FET is hermetically sealed and comes in an IB case style, suitable for surface mount applications. Its design ensures high reliability and consistent performance, making it suitable for various communication systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power (P1dB) of the FLM1011-8F is 39.0 dBm.
The typical power gain (G1dB) for the FLM1011-8F is 7.0 dB.
The typical power-added efficiency (ηadd) of the FLM1011-8F is 29%.
The FLM1011-8F operates across a broad band from 10.7 to 11.7 GHz.
The FLM1011-8F is impedance matched to 50 ohms.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.