SI1012RT1GE3
Vishay
The Vishay Dale SI1012RT1GE3 is an N-Channel MOSFET designed for low-voltage applications. It features a low on-resistance and fast switching speed.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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44,369 pcs
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44369 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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| Halogen Free |
The Vishay SUD50P04-08 is a P-Channel TrenchFET® power MOSFET designed for applications such as power switches, load switches in high current applications, and DC/DC converters. It offers a drain-source voltage (VDS) of -40V and a continuous drain current (ID) of -50A at 25°C.
Key electrical characteristics include a low typical on-resistance (RDS(on)) of 0.0081 Ω at VGS = -10V and 0.0117 Ω at VGS = -4.5V. The device operates over a wide temperature range from -55°C to +150°C.
Packaged in a TO-252 surface-mount package, the SUD50P04-08 is suitable for various power management designs. It is also noted as being lead (Pb)-free and halogen-free.
This MOSFET is 100% Rg and UIS tested, ensuring reliability for demanding applications.
The minimum drain-source breakdown voltage is -40V at VGS = 0V and ID = -250 μA.
The maximum continuous drain current is -50A at both TC = 25°C and TC = 70°C, package limited.
The operating junction and storage temperature range is -55°C to +150°C.
The device is housed in a TO-252 surface mount package.
The typical Rds(on) is 0.0081 Ω at VGS = -10V and ID = -50A.
Yes, the part is lead (Pb)-free and halogen-free.