| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The Vishay Siliconix SI2307CDS is a P-Channel MOSFET designed for load switching in portable devices. It features a TrenchFET® power MOSFET construction and a drain-source voltage (Vds) rating of -30V.
Key electrical characteristics include a maximum on-resistance (RDS(on)) of 0.088Ω at a gate-source voltage (Vgs) of -10V, and 0.138Ω at Vgs = -4.5V. The typical gate charge (Qg) is 4.1nC. Continuous drain current (Id) capabilities vary with temperature, with a maximum of -3.5A at TC = 25°C and -2.2A at TA = 70°C.
This MOSFET is housed in a SOT-23 (TO-236) package, suitable for surface mounting. It operates within a junction and storage temperature range of -55°C to +150°C. The part is available in lead (Pb)-free and lead (Pb)-free and halogen-free options.
Thermal performance includes a maximum junction-to-ambient thermal resistance (RthJA) of 115°C/W and a maximum junction-to-foot thermal resistance (RthJF) of 70°C/W under steady-state conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V minimum.
SOT-23 surface-mount package.
-55°C to +150°C.
0.088Ω maximum at Vgs=-10V and 0.138Ω maximum at Vgs=-4.5V.
-3.5A at case temperature 25°C and -2.7A at ambient temperature 25°C.
4.1 nC typical.
1.8W at case temperature 25°C and 1.1W at ambient temperature 25°C.