Mfr Part #:

SI1012RT1GE3

Mfr Name: Vishay

The Vishay Dale SI1012RT1GE3 is an N-Channel MOSFET designed for low-voltage applications. It features a low on-resistance and fast switching speed.

✓ Total Stock: 1,000,000 pcs

$ Price Range: $0.01

SI1012RT1GE3 Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	1,000,000 pcs On Request	1000000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SI1012RT1GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Vishay
ESD Protection	2000 V
Halogen Free	true
Lead Spacing	0.8 mm
Mounting Type	Surface Mount
Storage Temperature	-55°C ~ 125°C

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SI1012RT1GE3 Description

Short technical summary and product information.

The Vishay Dale SI1012RT1GE3 is an N-Channel TrenchFET Power MOSFET rated for 1.8 V gate-source operation. It offers a low on-resistance as low as 0.7 Ω at VGS = 4.5 V and a typical threshold voltage of 0.8 V. This MOSFET is ESD protected up to 2000 V and features fast switching speeds of 10 ns.

Applications include drivers for relays, solenoids, lamps, and hammers, as well as battery-operated systems, power supply converter circuits, and load/power switching in devices like cell phones and pagers. The SI1012RT1GE3 is available in SC-75A (SOT-416) and SC-89 (SOT-490) packages, suitable for surface mount applications.

Key electrical characteristics include a drain-source voltage (VDS) of 20 V and continuous drain current (ID) up to 600 mA at VGS = 4.5 V. The low on-resistance and low threshold voltage make it easy to drive switches and enable low-voltage operation.

SI1012RT1GE3 Quick Information

Product Type: MOSFET

Series: Si1012R

Canonical Name: Vishay Dale SI1012RT1GE3 N-Channel MOSFET

Subcategory: N-Channel

SI1012RT1GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: true

SI1012RT1GE3 Estimated Pricing

Qty	Low	High
1+	$0.01	$0.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1012RT1GE3 Features

N-Channel 1.8 V rated MOSFET.
Low on-resistance: 0.7 Ω at 4.5 V.
Low threshold voltage: 0.8 V typical.
Fast switching speed: 10 ns typical.
ESD protected: 2000 V.

SI1012RT1GE3 Applications

Ideal for relay and solenoid drivers.
Suitable for battery-powered devices.
Used in power supply converters.
Applicable for load switching circuits.
Designed for cell phones and pagers.

SI1012RT1GE3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the SI1012RT1GE3?

The maximum drain-source voltage is 20V.

What is the on-resistance at VGS=4.5V?

The maximum on-resistance is 0.7Ω at VGS=4.5V.

What is the maximum drain current at VGS=4.5V?

The maximum drain current is 600mA at VGS=4.5V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 0.8V.

What is the switching speed?

The typical switching speed is 10ns.

What packages are available?

The device is available in SC-75A and SC-89 surface-mount packages.

Is the gate ESD protected?

Yes, the gate-source is ESD protected to 2000V.