SI1012RT1GE3
Vishay
The Vishay Dale SI1012RT1GE3 is an N-Channel MOSFET designed for low-voltage applications. It features a low on-resistance and fast switching speed.
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258,286 pcs
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258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Vishay Dale SI3585CDV is a versatile N- and P-Channel MOSFET designed for applications such as load switches in portable devices, DC/DC converters, and drivers for motors, solenoids, and relays.
This MOSFET features a drain-source breakdown voltage of 20V. It offers a continuous drain current of up to 3.9A at 25°C case temperature and a maximum power dissipation of 1.4W at 25°C case temperature. The operating junction and storage temperature range is from -55°C to 150°C.
The device is housed in a compact TSOP-6 package, suitable for surface mounting. Its thermal resistance junction-to-ambient is typically 93°C/W.
The SI3585CDV is specified with a gate threshold voltage typically between 0.6V and 1.5V. It also includes features like 100% R g tested and TrenchFET Power MOSFET technology.
| Qty | Low | High |
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| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 20 V.
TSOP-6 surface mount package.
-55 °C to 150 °C.
3.9 A at TC = 25 °C and 3.5 A at TA = 25 °C.
The gate threshold voltage ranges from 0.6 V to 1.5 V.
Maximum power dissipation is 1.4 W at TC = 25 °C and 1.1 W at TA = 25 °C.
±12 V.