SI1012RT1GE3
Vishay
The Vishay Dale SI1012RT1GE3 is an N-Channel MOSFET designed for low-voltage applications. It features a low on-resistance and fast switching speed.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Vishay Dale SI4925BDY is a dual P-Channel TrenchFET Power MOSFET designed for load switching applications in consumer electronics such as notebook PCs, desktop PCs, and game stations. It offers a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 7.1A at 25°C.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.025 Ω at VGS = -10V and 5.5A at VGS = -4.5V. The device also features a gate threshold voltage (VGS(th)) between -1V and -3V. Dynamic characteristics include a total gate charge (Qg) of 33 nC typical.
Packaged in an SO-8 surface-mount package, the SI4925BDY operates over a temperature range of -55°C to 150°C. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the SI4925BDY is 30V.
The typical on-state resistance of the SI4925BDY at VGS = -10V and ID = -7.1A is 0.020 Ω.
The typical continuous drain current for the SI4925BDY at 25°C is -7.1A.
The SI4925BDY is available in an SO-8 package.
Yes, the SI4925BDY is RoHS3 Compliant.
Yes, the SI4925BDY is halogen-free.