TK50S04K3L
Toshiba
The Toshiba TK50S04K3L is an N-channel MOSFET with a low drain-source on-resistance of 4.3 mOhm at 10V Vgs. It is designed for applications requiring high efficiency and switching performance.
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20,030 pcs
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20030 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SUD50N02-04P is a single MOSFET manufactured by VBsemi. It is designed for applications requiring a drain-source voltage of up to 20V and can handle a continuous drain current of up to 100A. The device features a typical gate threshold voltage ranging from 0.5V to 1.5V.
This MOSFET is housed in a TO252 package, making it suitable for surface-mount applications where space is a consideration. The technology used is MOSFET, indicating its suitability for switching and amplification tasks.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level (MSL) 1, and REACH unaffected status. These specifications suggest the component is designed for general industrial and electronic applications where reliability and standard compliance are important.
The maximum drain-source voltage is 20V.
The continuous drain current rating is 100A.
The SUD50N02-04P MOSFET is supplied in a TO252 package.
The typical gate threshold voltage is between 0.5V and 1.5V.
Yes, the SUD50N02-04P is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
