TK50S04K3L
Toshiba
The Toshiba TK50S04K3L is an N-channel MOSFET with a low drain-source on-resistance of 4.3 mOhm at 10V Vgs. It is designed for applications requiring high efficiency and switching performance.
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25,868 pcs
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25868 pcs | On Request | 1 | On Request | On Request | 17+PB | On Request | On Request |
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The STU6025NL from SamHop Microelectronics is an N-Channel Logic Level Enhancement Mode Field Effect Transistor. This component is designed for various electronic applications requiring efficient switching and voltage control.
Key electrical specifications include a Drain-Source Voltage of 30V. The on-resistance (Rds(on)) is specified at 2mΩ at 10V and 3mΩ at 4.5V, indicating good conduction characteristics. The typical Gate-Source Threshold Voltage (Vgs(th)) is 1.9V.
The transistor is housed in a TO252 package, suitable for surface-mount applications. Its logic-level gate drive makes it compatible with lower voltage control signals.
This FET is a component within the broader category of discrete semiconductors, specifically designed for power switching and amplification tasks in electronic circuits.
The Drain-Source Voltage is 30V.
The Rds(on) at 10V is 2mΩ.
The Rds(on) at 4.5V is 3mΩ.
The typical Gate-Source Threshold Voltage is 1.9V.
The STU6025NL is in a TO252 package.