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44,338 pcs
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44338 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Toshiba TK50S04K3L is an N-channel MOSFET suitable for various applications including automotive motor drivers, DC-DC converters, and switching voltage regulators. It features a low drain-source on-resistance of 4.3 mΩ (typ.) at 10V Vgs and 5 mΩ (typ.) at 4.5V Vgs, contributing to high efficiency.
This MOSFET has a maximum drain-source voltage of 40V and a maximum continuous drain current of 85A. The gate threshold voltage ranges from 2.0 to 3.0V (VDS = 10 V, ID = 1 mA), with a typical value of 1.85V. The device is packaged in a TO252 package, suitable for surface-mount applications.
Key electrical characteristics include a low leakage current of 10A (max) at 40V VDS. The enhancement mode operation and low on-resistance make it a versatile component for power management circuits.
The maximum drain-source voltage is 40V.
The typical drain-source on-resistance is 4.3 mΩ at 10V Vgs.
The continuous drain current is up to 85A.
The package type is TO252.
Applications include automotive motor drivers, DC-DC converters, and switching voltage regulators.