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1,898 pcs
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1898 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Infineon STW69N65M5 is a high-performance N-Channel Power MOSFET. It is designed for demanding power switching applications, offering a robust 650V breakdown voltage and a continuous drain current of 69A at 25°C.
Key electrical characteristics include a low Rds(on) of 0.28 Ohms maximum at 10.5A and 10V, a gate threshold voltage of 4V maximum, and typical gate charge of 55nC. The MOSFET also features typical input capacitance of 1700pF, output capacitance of 130pF, and reverse transfer capacitance of 20pF.
Packaged in a TO-247-3 through-hole configuration, the STW69N65M5 is suitable for various power management solutions. Its maximum power dissipation is rated at 300W at 25°C case temperature.
The STW69N65M5 has a breakdown voltage of 650V.
The continuous drain current is 69A at 25°C.
The maximum Rds(on) is 0.28 Ohms at 10.5A and 10V.
The STW69N65M5 is supplied in a TO-247-3 package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.