| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,340 pcs
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2340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP250N is an N-channel power MOSFET manufactured by Vishay Dale, part of the HEXFET® series. This enhancement-mode silicon gate transistor is designed for high-efficiency power electronics applications, particularly switching. It features a continuous drain current of 30A and a drain-source breakdown voltage of 200V.
Key electrical characteristics include a maximum on-resistance (Rds On) of 75mΩ at 18A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 4V maximum at 250μA. The MOSFET has a gate-to-source voltage rating of ±20V and an input capacitance of 2159pF maximum. Switching performance is supported by typical turn-on delay times of 14ns and turn-off delay times of 41ns.
With a maximum power dissipation of 214W and an operating temperature range of -55°C to 175°C, the IRFP250N is suitable for demanding conditions. It is housed in a TO-247-3 package with through-hole mounting. The terminal finish is matte tin with a nickel barrier. Additional features include avalanche rating, high reliability, and ultra-low resistance.
The maximum continuous drain current is 30A at 25°C case temperature.
The minimum drain-to-source breakdown voltage is 200V.
The maximum on-resistance is 75mΩ at 18A drain current and 10V gate drive.
The IRFP250N is available in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum power dissipation is 214W at the case temperature.