IRGP4640D-EPBF The Infineon IRGP4640D-EPBF is an n-channel IGBT transistor with a 600V collector-emitter voltage and 65A continuous collector current at 25°C. It features a TO-247-3 package for through-hole mounting.
Mfr Part #:

IRGP4640D-EPBF

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IRGP4640D-EPBF is an n-channel IGBT transistor with a 600V collector-emitter voltage and 65A continuous collector current at 25°C. It features a TO-247-3 package for through-hole mounting.
✓ Total Stock: 500 pcs

IRGP4640D-EPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
450 pcs
450 pcs On Request 1 On Request On Request 13+ On Request On Request
Non-Authorised Inventory information
50 pcs
50 pcs On Request 1 On Request On Request 13+ On Request On Request

IRGP4640D-EPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Package / Case

IRGP4640D-EPBF Description

Short technical summary and product information.

The Infineon IRGP4640D-EPBF is a high-performance n-channel IGBT transistor designed for demanding applications. It offers a robust 600V collector-emitter voltage and a continuous collector current of 65A at 25°C (40A at 100°C), with a maximum power dissipation of 250W at 25°C.

 

This IGBT features low VCE(ON) and switching losses, contributing to high efficiency across a wide range of applications and switching frequencies. Its square RBSOA and maximum junction temperature of 175°C ensure improved reliability and higher power capability, even under hard switching conditions. The positive VCE(ON) temperature coefficient facilitates excellent current sharing in parallel operations, and a 5μs short circuit SOA enables effective protection schemes.

 

Packaged in a TO-247-3 through-hole configuration, the IRGP4640D-EPBF is suitable for industrial motor drives, inverters, UPS systems, and welding equipment. It is lead-free and RoHS compliant, aligning with environmental standards.

IRGP4640D-EPBF Quick Information

Product Type: IGBT Transistor
Series: TrenchStop
Canonical Name: Infineon IRGP4640D-EPBF IGBT Transistor
Subcategory: Single IGBT Transistors

IRGP4640D-EPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRGP4640D-EPBF Features

  • 600V collector-emitter voltage rating.
  • 65A continuous collector current capability.
  • 250W maximum power dissipation.
  • TO-247-3 through-hole package.
  • Low VCE(ON) and switching losses.

IRGP4640D-EPBF Applications

  • Suitable for industrial motor drives.
  • Used in inverter power supplies.
  • Applicable for UPS systems.
  • Designed for welding equipment.

IRGP4640D-EPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the IRGP4640D-EPBF?

The maximum collector-emitter voltage (VCES) for the IRGP4640D-EPBF is 600V.

What is the continuous collector current rating at 100°C?

The continuous collector current (IC) at a case temperature of 100°C is 40A.

What is the maximum power dissipation at 25°C?

The maximum power dissipation (PD) at a case temperature of 25°C is 250W.

What is the operating junction temperature range?

The operating junction temperature range is from -55°C to +175°C.

What type of package is the IRGP4640D-EPBF in?

The IRGP4640D-EPBF is in a TO-247-3 package and uses through-hole mounting.

What is the RoHS status of this component?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

IRGP4640D-EPBF Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
TK40J60T
TK40J60T
Toshiba
The Toshiba TK40J60T is an N-Channel MOS Field Effect Transistor designed for switching regulator applications. It offers a 600V drain-source voltage and a continuous drain current of 40A.
View Part
IRFP260N
IRFP260N
Vishay
The IRFP260N is an N-Channel Power MOSFET from Vishay Dale, designed for efficient power management. It features a 200V breakdown voltage and 50A continuous current rating.
View Part
IRFP250N
IRFP250N
Vishay
The IRFP250N is an N-channel power MOSFET from Vishay Dale, designed for switching applications. It offers a 200V drain-source breakdown voltage and a continuous drain current of 30A.
View Part
STW69N65M5
STW69N65M5
Infineon
The Infineon STW69N65M5 is an N-Channel MOSFET designed for power applications. It features a 650V breakdown voltage and a 69A continuous drain current.
View Part
Home
Account

Categories