| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,054 pcs
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8054 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The Toshiba TK40J60T is a power field-effect transistor featuring an N-Channel MOS (DTMOS) structure. It is specifically designed for switching regulator applications, offering robust performance characteristics.
Key electrical specifications include a drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 40A at 25°C. The transistor exhibits a low typical drain-source on-resistance (RDS(ON)) of 0.065 Ohms, contributing to efficient power handling. Absolute maximum ratings are provided for various parameters, including pulsed drain current (IDP) of 80A, power dissipation (PD) of 400W, and avalanche energy (EAS) of 576mJ.
This device operates within a temperature range of -55°C to 150°C for both channel and storage. The TK40J60T is typically housed in a TO-247-3 package and is designed for through-hole mounting, making it suitable for various power electronics designs.
600V.
40A at 25°C.
TO-247-3, through-hole mounting.
-55°C to 150°C.
0.065Ω.
80A.
576mJ at 25°C.