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28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| SVHC Present |
The VBsemi STT3808NE is a single MOSFET designed for various electronic applications. It features a maximum Drain-Source Voltage (VDS) of 20V and a typical Continuous Drain Current (ID) of 6A. The Gate-Source Voltage (VGS) is rated at ±12V, with a typical Gate Threshold Voltage (Vth) ranging from 0.5V to 1.5V.
This MOSFET is housed in a compact SOT23-6 package, making it suitable for space-constrained designs. The component is RoHS3 Compliant, indicating adherence to environmental standards.
Key electrical characteristics include a VDS of 20V and an ID of 6A. The VGS is ±12V, and the Vth is between 0.5V and 1.5V. The SOT23-6 package is commonly used in surface-mount applications. Further details on technology, operating temperature, and other specific parameters would typically be found in the manufacturer's datasheet.
The maximum Drain-Source Voltage (VDS) for the STT3808NE is 20V.
The typical continuous drain current (ID) of the STT3808NE MOSFET is 6A.
The STT3808NE comes in a SOT23-6 package.
Yes, the STT3808NE is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STT3808NE is 1 Unlimited.