| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28,974 pcs
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28974 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| SVHC Present |
The STS2622A from VBsemi is a dual N-channel MOSFET utilizing Trench technology, housed in a compact SOT23-6 package. This configuration is ideal for applications requiring efficient switching performance and reduced space. It operates with a drain-source voltage (VDS) of up to 20V and can handle a maximum continuous drain current (ID) of 6A. The MOSFET exhibits a low on-resistance (RDS(ON)), measuring a maximum of 28mΩ at VGS = 2.5V and 22mΩ at VGS = 4.5V. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, making it suitable for low-voltage drive applications. The low RDS(ON) minimizes power loss and heat generation, contributing to overall system efficiency.
The STS2622A is well-suited for various applications including battery management systems (BMS), portable consumer electronics, power management modules, smart home and IoT devices, LED driver circuits, communication equipment power switches, and automotive electronics. Its small SOT23-6 footprint makes it particularly advantageous for compact designs and high-density power management modules.
20V.
6A.
0.5V to 1.5V.
22mΩ maximum.
SOT23-6.
Dual N-channel.
Trench technology.