| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The STS3623-VB from VBsemi is a high-performance dual N-channel MOSFET housed in a SOT23-6 package. This component is engineered for low-voltage, high-efficiency switching applications, offering a dual-channel configuration (N+N) within a single package for enhanced circuit integration and miniaturization.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 20V and a maximum Drain Current (Id) of 6A. The MOSFET exhibits low conduction losses with an On-Resistance (Rds(on)) of 28mΩ at Vgs = 2.5V and 22mΩ at Vgs = 4.5V. It utilizes Trench technology, which contributes to higher switching efficiency, reduced power consumption, and improved thermal management.
The operating temperature range is from -55°C to +150°C. The STS3623-VB is suitable for various applications such as power management in battery-powered devices, DC-DC converters, load switching, battery protection circuits, automotive electronics, IoT devices, and LED driver circuits. Its design considerations focus on high efficiency and low power loss, making it a valuable component for compact and power-sensitive electronic products.
The STS3623 is housed in a SOT23-6 package.
The operating temperature range is -55°C to +150°C.
The maximum drain current is 6A.
The maximum on-resistance is 22mΩ at Vgs = 4.5V.
The maximum drain-source voltage is 20V.
The STS3623 uses Trench technology.