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25,868 pcs
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25868 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The STT3457P is a P-Channel MOSFET from VBsemi, housed in a compact SOT23-6 package. This component is engineered for applications requiring low on-resistance and efficient switching performance, making it suitable for miniaturized power electronic devices.
With a maximum drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -4.8A, the STT3457P is manufactured using Trench technology. This technology contributes to its low on-resistance values, achieving 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, which minimizes power loss during operation. The threshold voltage (Vth) is -1.7V, compatible with 5V or 3.3V logic drive levels.
Its design makes it ideal for low-voltage power switches, load switches, and load protection circuits. The small footprint of the SOT23-6 package is particularly beneficial for space-constrained applications such as portable devices, battery-powered systems, and various power management modules where high efficiency and compact size are critical.
The STT3457P is also well-suited for battery protection circuits, acting as a negative switch to control current flow and prevent overcurrent or short-circuit conditions. Its versatility extends to energy management, industrial automation, smart home devices, and specialty vehicles.
The maximum drain-source voltage (VDS) for the STT3457P is -30V.
The STT3457P MOSFET can handle a maximum continuous drain current (ID) of -4.8A.
The on-resistance (RDS(ON)) of the STT3457P is 49mΩ at VGS=10V.
The STT3457P MOSFET is supplied in a SOT23-6 package.
The threshold voltage (Vth) of the STT3457P is -1.7V.