TK50S04K3L
Toshiba
The Toshiba TK50S04K3L is an N-channel MOSFET with a low drain-source on-resistance of 4.3 mOhm at 10V Vgs. It is designed for applications requiring high efficiency and switching performance.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,650 pcs
|
4650 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Package / Case |
The SPN8878BT251TGB from SYNCMOS is an N-Channel logic enhancement mode power field-effect transistor. It is manufactured using high cell density, DMOS trench technology, specifically designed to enhance the efficiency of DC-DC converters, whether using synchronous or conventional switching PWM controllers.
Key electrical characteristics include a drain-source voltage of 30V and a continuous drain current of 70A. The on-resistance is specified as 7 mOhm at 10V and 70A, and 9 mOhm at 4.5V and 70A. The typical gate threshold voltage is 1.8V, with a maximum gate-source voltage of 20V.
This MOSFET is supplied in a TO252 package, suitable for surface mounting. Its optimized design aims for low gate charge, contributing to improved overall efficiency in power conversion applications.
The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.
The drain-source voltage for the SPN8878BT251TGB is 30V.
The continuous drain current for the SPN8878BT251TGB is 70A.
The on-resistance of the SPN8878BT251TGB is 7 mOhm at 10V gate-source voltage and 70A drain current.
The on-resistance of the SPN8878BT251TGB is 9 mOhm at 4.5V gate-source voltage and 70A drain current.
The typical gate threshold voltage for the SPN8878BT251TGB is 1.8V.
The SPN8878BT251TGB MOSFET is supplied in a TO252 package.
