| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,815 pcs
|
27815 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The Vishay Siliconix SI7469DP is a P-Channel TrenchFET® power MOSFET. It features a maximum drain-source voltage (Vds) of -80V and a gate-source voltage (Vgs) of ±20V. The device exhibits a low on-resistance, with RDS(on) max. at Vgs = -10V measuring 0.025Ω and at Vgs = -4.5V measuring 0.029Ω.
Continuous drain current (ID) is rated at -28A at TC = 25°C and TC = 70°C, with reduced ratings when mounted on an FR4 board. Pulsed drain current (IDM) reaches -40A. The MOSFET has a typical gate charge (Qg) of 55nC.
Maximum power dissipation (PD) is 83W at TC = 25°C and 53W at TC = 70°C. When mounted on an FR4 board, PD is 5.2W at TA = 25°C and 3.3W at TA = 70°C. The operating junction and storage temperature range is -55°C to +150°C.
The SI7469DP is supplied in a PowerPAK® SO-8 single package, suitable for surface mounting. It is available in lead (Pb)-free and lead (Pb)-free and halogen-free options.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the SI7469DP is -80 V.
The maximum on-resistance (RDS(on) max.) at VGS = -10 V for the SI7469DP is 0.025 Ω.
The continuous drain current (ID) rating for the SI7469DP at TC = 25 °C is -28 A.
The typical gate charge (Qg) for the SI7469DP is 55 nC.
The SI7469DP MOSFET is supplied in a PowerPAK SO-8 package.
The operating junction and storage temperature range for the SI7469DP is -55 °C to +150 °C.