| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,657 pcs
|
51657 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Tape & Reel |
The Vishay Siliconix Si6423DQ is a P-Channel MOSFET designed for load switch applications. It operates with a Drain-Source Voltage (VDS) of -12V and features TrenchFET technology for enhanced performance.
Key electrical characteristics include a low Drain-Source On-State Resistance (RDS(on)) as low as 0.0085 Ω at VGS = -4.5V. The device supports continuous drain currents up to -9.5A at 25°C and pulsed drain currents up to -30A. Its Gate-Source Voltage (VGS) range is ±8V.
Packaged in a TSSOP-8 surface-mount configuration, the Si6423DQ is designed for efficient thermal management, with a maximum power dissipation of 1.5W at 25°C. The operating junction and storage temperature range is -55°C to 150°C.
This MOSFET is halogen-free and lead-free, aligning with modern environmental standards. Its robust design makes it suitable for various power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is -12 V.
The continuous drain current is -9.5 A at TA = 25°C and -8 A at TA = 70°C.
The operating junction and storage temperature range is -55°C to 150°C.
It is housed in a TSSOP-8 surface-mount package.
Typical RDS(on) is 8.5 mΩ at VGS = -4.5 V and ID = -9.5 A. It is 10.6 mΩ at VGS = -2.5 V and 14 mΩ at VGS = -1.8 V.
The maximum gate threshold voltage is -0.8 V at VDS = VGS and ID = -400 µA.
Typical turn-on delay is 50 ns, rise time 75 ns, turn-off delay 270 ns, fall time 200 ns under specified test conditions.