| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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871 pcs
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871 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Vishay Si4856ADY-T1-E3 is a discrete N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 11A. The on-resistance (Rds(On)) is specified as 0.018 Ohms at 10V gate-source voltage, indicating efficient power handling.
This MOSFET is housed in a standard SOIC-8 surface-mount package, making it suitable for automated assembly processes. The operating temperature range is from -55°C to 150°C, allowing for use in demanding environments. Its electrical characteristics and package type make it a versatile component for power management and switching circuits.
Key electrical parameters include a Vds of 30V and an Id of 11A. The low Rds(On) of 0.018 Ω at 10V is crucial for minimizing power loss and improving efficiency in applications. The component is designed for surface mounting, requiring appropriate PCB layout and soldering techniques.
30 V.
11 A.
0.018 Ω at a gate-source voltage of 10 V.
-55°C to 150°C.
SOIC-8 surface mount package.
Surface mount.
Yes, tape and reel packaging.