SI4856ADY-T1-E3 The Vishay Si4856ADY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and 11A continuous drain current. It is supplied in a surface-mount SOIC-8 package.
Mfr Part #:

SI4856ADY-T1-E3

Available from 1 distributors
Mfr Name: SI
SI
The Vishay Si4856ADY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and 11A continuous drain current. It is supplied in a surface-mount SOIC-8 package.
✓ Total Stock: 871 pcs

SI4856ADY-T1-E3 Available from 1 distributor

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871 pcs
871 pcs On Request 1 On Request On Request 05+ On Request On Request

SI4856ADY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SI4856ADY-T1-E3 Description

Short technical summary and product information.

The Vishay Si4856ADY-T1-E3 is a discrete N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 11A. The on-resistance (Rds(On)) is specified as 0.018 Ohms at 10V gate-source voltage, indicating efficient power handling.

 

This MOSFET is housed in a standard SOIC-8 surface-mount package, making it suitable for automated assembly processes. The operating temperature range is from -55°C to 150°C, allowing for use in demanding environments. Its electrical characteristics and package type make it a versatile component for power management and switching circuits.

 

Key electrical parameters include a Vds of 30V and an Id of 11A. The low Rds(On) of 0.018 Ω at 10V is crucial for minimizing power loss and improving efficiency in applications. The component is designed for surface mounting, requiring appropriate PCB layout and soldering techniques.

SI4856ADY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Si4856ADY-T1-E3 N-Channel MOSFET
Subcategory: Discrete Semiconductor

SI4856ADY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4856ADY-T1-E3 Features

  • 30V drain-source voltage rating.
  • 11A continuous drain current.
  • Low 0.018 Ohm on-resistance.
  • SOIC-8 surface-mount package.
  • Wide -55°C to 150°C operating temperature.

SI4856ADY-T1-E3 Applications

  • Ideal for power switching circuits.
  • Suitable for voltage regulation.
  • Used in DC-DC converters.
  • Applicable in battery management.

SI4856ADY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the SI4856ADY-T1-E3?

30 V.

What is the continuous drain current (Id) rating?

11 A.

What is the typical on-resistance (Rds(on))?

0.018 Ω at a gate-source voltage of 10 V.

What is the operating temperature range?

-55°C to 150°C.

What package is the SI4856ADY-T1-E3 available in?

SOIC-8 surface mount package.

What mounting type does this device use?

Surface mount.

Is the SI4856ADY-T1-E3 supplied in tape and reel?

Yes, tape and reel packaging.

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