| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500,000 pcs
|
500000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present |
The SI2316BDS-T1-E3 from HAY is an N-channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 4.5A. The device exhibits a low on-resistance of 50 mOhm at 3.9A and 10V gate-source voltage, contributing to efficient power handling.
This MOSFET operates with a gate threshold voltage of 3V at 250µA and can withstand a maximum gate-source voltage of ±20V. Its power dissipation is rated at 1.25W (ambient) and 1.66W (case temperature). The operating temperature range is from -55°C to 150°C (junction).
The SI2316BDS-T1-E3 is housed in a SOT-23-3 (TO-236-3, SC-59) surface-mount package. It is supplied in cut tape packaging. The device is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1.
This component is suitable for general-purpose switching applications where efficient power management and a compact footprint are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 4.5A.
The on-resistance is 50 mOhm.
The gate threshold voltage is 3V at 250µA.
The operating temperature range is -55°C to 150°C.
The SI2316BDS-T1-E3 is supplied in a SOT-23-3 (TO-236-3, SC-59) package.