| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
328,727 pcs
|
328727 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Configuration | |
| Drain to Source Voltage (Vdss) | |
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| Technology |
The SI4947DY-T1-GE3 is a dual P-Channel MOSFET manufactured by Vishay Siliconix. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3A at 25°C. The on-resistance (Rds On) is specified at a maximum of 80mOhm at 3.9A and 10V gate-source voltage.
With a gate threshold voltage (Vgs(th)) of 1V at 250µA, this MOSFET utilizes Metal Oxide technology and is part of the TrenchFET® series. It has a maximum power dissipation of 1.2W and a gate charge (Qg) of 8nC at 5V.
The device is designed for surface mounting and comes in an 8-SOIC package. It operates within a temperature range of -55°C to 150°C (TJ). The SI4947DY-T1-GE3 is suitable for various electronic applications requiring efficient switching and power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 3A at 25°C.
The maximum on-resistance (Rds On) is 80 mOhm at Vgs=10V and Id=3.9A.
The operating junction temperature range is -55°C to 150°C.
The device is available in an 8-SOIC surface-mount package.
The maximum gate threshold voltage (Vgs(th)) is 1V at Id=250µA.
The maximum power dissipation is 1.2W.