| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
74 pcs
|
74 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The Vishay Dale SI4840BDY is a TrenchFET® power MOSFET with an N-Channel configuration. It is rated for a 40V drain-source breakdown voltage and features a low on-resistance, with a maximum of 0.009 Ω at VGS = 10 V and 0.012 Ω at VGS = 4.5 V. The device supports a continuous drain current of up to 19A at TC = 25 °C and a pulsed drain current of 50A.
This MOSFET is suitable for applications such as synchronous rectification and secondary side power management in POL and IBC converters. It is tested 100% for Rg and UIS, ensuring reliability. The operating junction and storage temperature range is -55 °C to +150 °C.
The SI4840BDY is available in the SO-8 package, designed for surface mounting. It is offered in lead (Pb)-free and lead (Pb)-free and halogen-free versions.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.19 | $7.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 40V.
The maximum Rds(on) at VGS = 10V is 0.009 Ohms.
The continuous drain current at TC = 25°C is 19A.
The operating junction and storage temperature range is -55°C to +150°C.
The SI4840BDY is available in the SO-8 package.
Yes, the SI4840BDY is available in lead (Pb)-free and lead (Pb)-free and halogen-free versions.
