| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,286 pcs
|
258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Vishay Siliconix SiA519EDJ is a versatile MOSFET offering both N-channel and P-channel functionality with a 20V drain-source voltage rating. It is engineered with TrenchFET® Power MOSFET technology, ensuring high performance and efficiency.
Key electrical characteristics include low on-resistance values, such as 0.040 Ω at VGS = 4.5 V for the N-channel and 0.090 Ω at VGS = -4.5 V for the P-channel. The typical gate charge is 3.7 nC for N-channel and 5.3 nC for P-channel, contributing to fast switching speeds.
This device is suitable for applications requiring robust power handling, with a continuous drain current of up to 4.5A. It features typical ESD protection of 2000V for N-channel and 1000V for P-channel.
The SiA519EDJ is supplied in a compact PowerPAK® SC-70-6 Dual package, designed for surface mounting. This package type is beneficial for space-constrained designs, offering efficient thermal performance with a maximum junction-to-case thermal resistance of 16 °C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The operating junction and storage temperature range is -55°C to 150°C.
It is housed in a PowerPAK SC-70-6 Dual surface-mount package.
The continuous drain current is 4.5A at case temperature 25°C and ambient 25°C (package-limited on FR4).
Typical N-channel on-resistance is 40mΩ at VGS=4.5V and 65mΩ at VGS=2.5V.
Typical gate charge is 3.7nC for the N-channel and 5.3nC for the P-channel.
Yes, the N-channel has ESD protection of 2000V and the P-channel has 1000V (typical).